Part I Introduction to liquid process

Chapter 1. Liquid process

1-1 Liquid and its formability

1-2 Categories of liquid process

1-2-1 First step: Conversion way from liquid to solid

1-2-2 Second step: Direct forming process

Part II Silicon-based materials

Chapter 2. Guide to silicon-based materials

Chapter 3. Liquid silicon

3-1 CPS

3-1-1 Hydrosilanes and CPS

3-1-2 Structures of a CPS molecule

3-1-3 Electronic structure of isolated CPS molecule

3-1-4 Interaction between CPS molecules

3-2 Silicon ink

3-2-1 Silicon ink from CPS

3-2-2 Polymer structure in silicon ink

3-3-3 Doped silicon inks

Chapter 4. Thin film formation by coating

4-1 Coating process and molecular forces

4-2 The origin of molecular forces

4-2-1 Theory of van der Waals free energy

4-2-2 Measurement of refractive index n

4-2-3 Molecular forces of CPS and silicon compounds

4-3 Coating of Si ink

4-3-1 General remarks on Si ink coating

4-3-2 Observations of liquid films

4-3-3 Hamaker constant and coating property

4-4 Conversion from polysilane to amorphous Si by pyrolysis

4-4-1 Film appearance during pyrolysis and TG/DTA analysis of Si ink

4-4-2 Raman scattering analysis

4-4-3 FT-IR and SIMS analyses

4-4-4 Properties of amorphous films

Chapter 5. Liquid vapor deposition using liquid silicon (LVD)

5-1 Formation of i, n and p type silicon film by LVD

5-1-1 LVD method and experiment

5-1-2 CPS deposition process

5-1-3 Film properties

5-1-4 Conclusion

5-2 High-quality amorphous silicon film with LVD

5-2-1 New equipment for LVD

5-2-2 Film quality with processing temperature

5-2-3 Film quality with CPS supply speed

5-2-4 Electronic properties of a-Si:H films

5-2-5 Oxygen contamination in a-Si:H film

5-2-6 Summary

Chapter 6. Liquid silicon family materials (1)

-- SiO 2 , CoSi 2 and Al from liquid Si --

6-1 SiO 2 fabrication from liquid silicon

6-1-1 Forming SiO 2 films from liquid silicon material

6-1-2 The sole solution-processed SiO 2 film for TFTs

6-1-3 Multi use of solution-processed SiO 2 films for TFTs

6-1-4 Conclusion

6-2 CoSi 2 fabrication from liquid silicon

6-2-1 Metal silicide from solution

6-2-2 Synthesis of cobalt silicide ink

6-2-3 Formation of CoSi 2 films

6-2-4 TEM observation

6-2-5 Comparison of this process with the conventional ones

6-2-6 More detailed analyses

6-2-7 Conclusions

6-3 Al fabrication via solution process

6-3-1 Triethylamine alane as a precursor of metal Al

6-3-2 Deposition process and reaction

6-3-3 Analysis of film structure and Al growth manner

6-3-4 Selective deposition of Al

6-3-5 Conclusion

Chapter 7. Liquid silicon family materials (2)

-- SiC ink and SiC film from liquid Si --

7-1 SiC fabrication via liquid process

7-1-1 Preparation and characterization of SiC precursor polymer

7-1-2 a-SiC film formation and analyses of films

7-1-3 Polymer structure

7-1-4 Polymer-to-ceramic conversion

7-1-5 Conclusion

7-2 Correlation of Si/C stoichiometry between SiC ink and a-SiC film

7-2-1 Polymer and film preparation

7-2-2 Correlation between PSH and a-SiC

7-2-3 Structural properties of an a-SiC film

7-2-4 Optical and electrical properties of an a-SiC film

7-2-5 Conclusion

7-3 n-type a-SiC by coating

7-3-1 Polymer and film preparation and their analyses

7-3-2 Polymer analysis

7-3-3 Thin-film formation

7-3-4 Effect of carbon content on film

7-3-5 Effect of phosphorous concentration on film

7-3-6 Conclusion

7-4 p-type a-SiC via LVD method

7-4-1 SiC-ink preparation and film deposition

7-4-2 Ink analysis

7-4-3 Film analysis

7-4-4 Discussion

7-4-5 Conclusion

Chapter 8. Nano pattern formation using liquid silicon

8-1 Area selective deposition of silicon family materials

8-1-1 Area selective deposition of silicon using the difference of molecular force

8-1-